MICRON MT29F4G16ABBDAH4-IT:D Flash Memory, SLC NAND, 4 Gbit, 256M x 16bit, Parallel, VFBGA, 63 Pins

MT29F4G16ABBDAH4-IT:D is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).

• 4Gb density, 16-bit device width
• SLC level, 1.8V (1.7 to 1.95V) operating voltage
• Feature set D, Async interface
• Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
• Program page cache mode, read page cache mode, one-time programmable (OTP) mode
• Operation completion, pass/fail condition, write-protect status
• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
• WP# signal: write protect entire device
• Industrial operating temperature range from -40°C to +85°C, package style is 63-ball VFBGA