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$2.04The Story
- Top boot sector device
- Manufactured on 110nm process technology - Fully compatible with 200nm S29AL008D
- Secured silicon sector region
- Flexible sector architecture
- Hardware method of locking a sector to prevent any program or erase operations within that sector
- Reduces overall programming time when issuing multiple program command sequences
- Pinout and software compatible with single-power supply flash
- Superior inadvertent write protection
- High performance
- Ultralow power consumption
- Cycling endurance - 1000000 cycles per sector typical
- Data retention - 20 years typical
- Erase suspend/erase resume
- Data# polling and toggle bits
- Provides a hardware method of detecting program or erase cycle completion
- Hardware method to reset the device to reading array data
Applications
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
Product details
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 85°C |
| Access Time | 70ns |
| Clock Frequency | - |
| No. of Pins | 48Pins |
| Flash Memory Configuration | 1M x 8bit / 512K x 16bit |
| Memory Size | 8Mbit |
| Product Range | 3V Parallel NOR Flash Memories |
| Memory Case Style | TSOP |
| Supply Voltage Min | 2.7V |
| IC Interface Type | CFI |
| Packaging | Each |
| Supply Voltage Max | 3.6V |
| MSL | MSL 3 - 168 hours |
Other details
| Brand | CYPRESS SEMICONDUCTOR |
| Part Number | S29AL008J70TFI010 |
| Quantity | Each |
| Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Description
- Top boot sector device
- Manufactured on 110nm process technology - Fully compatible with 200nm S29AL008D
- Secured silicon sector region
- Flexible sector architecture
- Hardware method of locking a sector to prevent any program or erase operations within that sector
- Reduces overall programming time when issuing multiple program command sequences
- Pinout and software compatible with single-power supply flash
- Superior inadvertent write protection
- High performance
- Ultralow power consumption
- Cycling endurance - 1000000 cycles per sector typical
- Data retention - 20 years typical
- Erase suspend/erase resume
- Data# polling and toggle bits
- Provides a hardware method of detecting program or erase cycle completion
- Hardware method to reset the device to reading array data
Applications
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
Product details
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 85°C |
| Access Time | 70ns |
| Clock Frequency | - |
| No. of Pins | 48Pins |
| Flash Memory Configuration | 1M x 8bit / 512K x 16bit |
| Memory Size | 8Mbit |
| Product Range | 3V Parallel NOR Flash Memories |
| Memory Case Style | TSOP |
| Supply Voltage Min | 2.7V |
| IC Interface Type | CFI |
| Packaging | Each |
| Supply Voltage Max | 3.6V |
| MSL | MSL 3 - 168 hours |
Other details
| Brand | CYPRESS SEMICONDUCTOR |
| Part Number | S29AL008J70TFI010 |
| Quantity | Each |
| Technical Data Sheet EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.














