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$341.97
Original: $1,139.89
-70%ROHM BSM300D12P4G101 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 291 A, 1.2 kV, Module—
$1,139.89
$341.97The Story
Product details
| MOSFET Module Configuration: Half Bridge |
| Channel Type: Dual N Channel |
| Continuous Drain Current Id: 291A |
| Drain Source Voltage Vds: 1.2kV |
| Drain Source On State Resistance: - |
| Transistor Case Style: Module |
| No. of Pins: 11Pins |
| Rds(on) Test Voltage: - |
| Gate Source Threshold Voltage Max: 4.8V |
| Power Dissipation: 925W |
| Operating Temperature Max: 150°C |
| Product Range: - |
Other details
| Brand | ROHM |
| Part Number | BSM300D12P4G101 |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Description
Product details
| MOSFET Module Configuration: Half Bridge |
| Channel Type: Dual N Channel |
| Continuous Drain Current Id: 291A |
| Drain Source Voltage Vds: 1.2kV |
| Drain Source On State Resistance: - |
| Transistor Case Style: Module |
| No. of Pins: 11Pins |
| Rds(on) Test Voltage: - |
| Gate Source Threshold Voltage Max: 4.8V |
| Power Dissipation: 925W |
| Operating Temperature Max: 150°C |
| Product Range: - |
Other details
| Brand | ROHM |
| Part Number | BSM300D12P4G101 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
