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Onsemi RFD14N05LSM Power Mosfet N Channel 50 V 14 A 0.1 ohm TO-252 (DPAK) Surface Mount
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Onsemi RFD14N05LSM Power Mosfet N Channel 50 V 14 A 0.1 ohm TO-252 (DPAK) Surface Mount

Onsemi RFD14N05LSM Power Mosfet N Channel 50 V 14 A 0.1 ohm TO-252 (DPAK) Surface Mount

$0.51

Original: $1.70

-70%
Onsemi RFD14N05LSM Power Mosfet N Channel 50 V 14 A 0.1 ohm TO-252 (DPAK) Surface Mount—

$1.70

$0.51

The Story

The RFD14N05LSM is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
  • Temperature compensating PSPICE® model
  • Can be driven directly from CMOS, NMOS and TTL circuits
  • Peak current vs pulse width curve
  • UIS rating curve
Applications

Power Management, Motor Drive & Control

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand ONSEMI
Part Number RFD14N05LSM
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Description

The RFD14N05LSM is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
  • Temperature compensating PSPICE® model
  • Can be driven directly from CMOS, NMOS and TTL circuits
  • Peak current vs pulse width curve
  • UIS rating curve
Applications

Power Management, Motor Drive & Control

Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand ONSEMI
Part Number RFD14N05LSM
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.