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INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858
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INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858

INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858

$2.46

Original: $8.19

-70%
INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858—

$8.19

$2.46

The Story

IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
  • Very low on-resistance RDS(on)
  • Wide safe operating area SOA
  • N-channel, normal level
  • 100% avalanche tested
  • Qualified according to JEDEC for target applications

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 100V
Continuous Drain Current Id: 120A
Drain Source On State Resistance: 0.0027ohm
Transistor Case Style: TO-263 (D2PAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3.3V
Power Dissipation: 179W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: OptiMOS 5
Qualification: -
MSL: MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPB033N10N5LFATMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Description

IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
  • Very low on-resistance RDS(on)
  • Wide safe operating area SOA
  • N-channel, normal level
  • 100% avalanche tested
  • Qualified according to JEDEC for target applications

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product details

Channel Type: N Channel
Drain Source Voltage Vds: 100V
Continuous Drain Current Id: 120A
Drain Source On State Resistance: 0.0027ohm
Transistor Case Style: TO-263 (D2PAK)
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3.3V
Power Dissipation: 179W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: OptiMOS 5
Qualification: -
MSL: MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPB033N10N5LFATMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

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