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INFINEON IMZA120R040M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 55 A, 1.2 kV, 0.039 ohm, TO-247 SP005425989, IMZA120R040M1H
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INFINEON IMZA120R040M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 55 A, 1.2 kV, 0.039 ohm, TO-247 SP005425989, IMZA120R040M1H

INFINEON IMZA120R040M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 55 A, 1.2 kV, 0.039 ohm, TO-247 SP005425989, IMZA120R040M1H

$5.86

Original: $19.52

-70%
INFINEON IMZA120R040M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 55 A, 1.2 kV, 0.039 ohm, TO-247 SP005425989, IMZA120R040M1H—

$19.52

$5.86

The Story

Product details

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 55A
Drain Source Voltage Vds: 1.2kV
Drain Source On State Resistance: 0.039ohm
Transistor Case Style: TO-247
No. of Pins: 4Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 4.2V
Power Dissipation: 227W
Operating Temperature Max: 175°C
Product Range: CoolSiC Trench Series

Other details

Brand INFINEON
Part Number IMZA120R040M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Description

Product details

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 55A
Drain Source Voltage Vds: 1.2kV
Drain Source On State Resistance: 0.039ohm
Transistor Case Style: TO-247
No. of Pins: 4Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 4.2V
Power Dissipation: 227W
Operating Temperature Max: 175°C
Product Range: CoolSiC Trench Series

Other details

Brand INFINEON
Part Number IMZA120R040M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.