đźšš Free Worldwide Shipping on All Orders!Shop Now
INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV
HomeStore

INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

$3.26

Original: $10.87

-70%
INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV—

$10.87

$3.26

The Story

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
29A
Open menu
Drain Source On State Resistance
0.0781ohm
Open menu
No. of Pins
7Pins
Open menu
Gate Source Threshold Voltage Max
5.1V
Open menu
Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds
1.2kV
Open menu
Transistor Case Style
TO-263HV
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
158W
Open menu
Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R078M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Description

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
29A
Open menu
Drain Source On State Resistance
0.0781ohm
Open menu
No. of Pins
7Pins
Open menu
Gate Source Threshold Voltage Max
5.1V
Open menu
Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds
1.2kV
Open menu
Transistor Case Style
TO-263HV
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
158W
Open menu
Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R078M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

You may also like

Thumbnail 1

Stmicroelectronics T1625T-8I Triac 800 V 16 A TO-220AB 1.3 120 35 mA

$2.99

Thumbnail 1

Stmicroelectronics TYN612MRG TYN612MRG Thyristor 600 V 5 mA 8 A 12 TO-220AB 3 Pins

$2.24

-70%
Thumbnail 1

Stmicroelectronics STGP8NC60KD Igbt 15 A 2.2 V 65 W 600 TO-220 3 Pins

$2.81

$0.84

-70%
Thumbnail 1

Infineon IPB720P15LMATMA1 Power Mosfet P Channel 150 V 41 A 0.0601 ohm TO-263 (D2PAK) Surface Mount

$7.60

$2.28

Thumbnail 1

Toshiba TK4R3E06PLS1X(S TK4R3E06PLS1X(S Power Mosfet N Channel 60 V 80 A 0.0033 ohm TO-220 Through Hole New

$3.72

Thumbnail 1

Ween Semiconductors TYN50W-1400TQ Thyristor 1.4 kV 50 mA A 79 TO-247 3 Pins

$6.01

Thumbnail 1

VISHAY SIHG25N50E-GE3 Power MOSFET, N Channel, 500 V, 26 A, 0.145 ohm, TO-247AC, Through Hole

$6.27

Thumbnail 1

LITTELFUSE IXYH30N450HV IGBT, 60 A, 3.2 V, 430 W, 4.5 kV, TO-247HV, 3 Pins

$97.79

-70%
Thumbnail 1

Littelfuse IXTH64N10L2 IXTH64N10L2 Power Mosfet N Channel 100 V 64 A 0.032 ohm TO-247 Through Hole

$15.43

$4.63

Thumbnail 1

Infineon IPW95R310PFD7XKSA1 IPW95R310PFD7XKSA1 Power Mosfet N Channel 950 V 17.5 A 0.24 ohm TO-247 Through Hole

$5.52

Thumbnail 1

VISHAY SIHB085N60EF-GE3 Power MOSFET, N Channel, 600 V, 34 A, 0.084 ohm, TO-263 (D2PAK), Surface Mount

$9.29

-70%
Thumbnail 1

ROHM BSM450D12P4G102 Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 447 A, 1.2 kV, Module

$1,419.48

$425.84