ALLIANCE MEMORY AS4C4M16SA-6TIN DRAM, SDRAM, 64 Mbit, 4M x 16bit, 166 MHz, TSOP-II, 54 Pins

AS4C4M16SA-6TIN 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a bank activate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either auto or self refresh are easy to use. By having a programmable mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.

• Fully synchronous operation, internal pipelined architecture
• 1M word x 16-bit x 4-bank, programmable mode registers, CAS latency: 2 or 3
• Burst length: 1, 2, 4, 8, or full page, burst type: sequential or interleaved, burst stop function
• Auto refresh and self refresh, 4096 refresh cycles/64ms, LVTTL interface
• CKE power down mode, single +3.3V ± 0.3V power supply
• 166MHz frequency
• 54-pin TSOPII package
• Industrial temperature range from -40 to 85°C