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$1.14
Original: $3.81
-70%INFINEON IPP65R225C7XKSA1 Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V—
$3.81
$1.14The Story
The IPP65R225C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Description
The IPP65R225C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
