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Infineon IPD60R360P7SAUMA1 Power Mosfet N Channel 600 V 9 A 0.3 ohm TO-252 (DPAK) Surface Mount
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Infineon IPD60R360P7SAUMA1 Power Mosfet N Channel 600 V 9 A 0.3 ohm TO-252 (DPAK) Surface Mount

Infineon IPD60R360P7SAUMA1 Power Mosfet N Channel 600 V 9 A 0.3 ohm TO-252 (DPAK) Surface Mount

$0.60

Original: $1.99

-70%
Infineon IPD60R360P7SAUMA1 Power Mosfet N Channel 600 V 9 A 0.3 ohm TO-252 (DPAK) Surface Mount—

$1.99

$0.60

The Story

Infineon extends the large portfolio of the 600 V CoolMOS P7 SJ MOSFET introducing an improved version of the standard TO-247 4 pin package. The TO-247 4 pin with asymmetric leads comes along with 0.54 mm increased creepage distance between the critical leads and enables smoother wave soldering and reduced board yield loss. The additional connection to the source (Kelvin connection), that is used as a reference potential for the gate driving voltage, eliminates the effect of voltage drops over the source inductance enabling faster switching transients which results in significant efficiency improvement. This allows for higher MOSFET RDS(on) usage and BOM cost savings. CoolMOS P7 is Infineon's best balanced technology, with optimized balance of ease-of-use and highest energy efficiency Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand INFINEON
Part Number IPD60R360P7SAUMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Description

Infineon extends the large portfolio of the 600 V CoolMOS P7 SJ MOSFET introducing an improved version of the standard TO-247 4 pin package. The TO-247 4 pin with asymmetric leads comes along with 0.54 mm increased creepage distance between the critical leads and enables smoother wave soldering and reduced board yield loss. The additional connection to the source (Kelvin connection), that is used as a reference potential for the gate driving voltage, eliminates the effect of voltage drops over the source inductance enabling faster switching transients which results in significant efficiency improvement. This allows for higher MOSFET RDS(on) usage and BOM cost savings. CoolMOS P7 is Infineon's best balanced technology, with optimized balance of ease-of-use and highest energy efficiency Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Other details

Brand INFINEON
Part Number IPD60R360P7SAUMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.